FDB088N08

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FAIRCHILD SEMICONDUCTOR FDB088N08 MOSFET Transistor, N Channel, 120 A, 75 V, 0.0073 ohm, 10 V, 2 V
Date Sheet

在庫數 192

1+： $3.17540
10+： $2.99566
100+： $2.82609
500+： $2.66613
1000+： $2.51521

小計金額 $3.17540

仕様よくある質問

Factory Lead Time：8 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Weight：1.31247g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：120A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：160W Tc
Turn Off Delay Time：244 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2004
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 4 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Terminal Form：GULL WING
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：160W
Case Connection：DRAIN
Turn On Delay Time：45 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：8.8m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds：6595pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：118nC @ 10V
Rise Time：158ns
Vgs (Max)：±20V
Fall Time (Typ)：102 ns
Continuous Drain Current (ID)：120A
Threshold Voltage：2V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：85A
Drain-source On Resistance-Max：0.0088Ohm
Drain to Source Breakdown Voltage：75V
Height：4.83mm
Length：10.67mm
Width：11.33mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant

在庫數 192

1+： $3.17540
10+： $2.99566
100+： $2.82609
500+： $2.66613
1000+： $2.51521

小計金額 $3.17540

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FDB088N08