画像はあくまで参考です。
STF10N62K3
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-220-3 Full Pack
- STMICROELECTRONICS STF10N62K3 Power MOSFET, N Channel, 8.4 A, 620 V, 0.68 ohm, 10 V, 3.75 V
Date Sheet
在庫數 22990
- 1+: $2.45384
- 10+: $2.31495
- 100+: $2.18391
- 500+: $2.06029
- 1000+: $1.94367
小計金額 $2.45384
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time:12 Weeks
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-220-3 Full Pack
- Number of Pins:3
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:8.4A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):30W Tc
- Turn Off Delay Time:41 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tube
- Series:SuperMESH3™
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Matte Tin (Sn) - annealed
- Terminal Position:SINGLE
- Base Part Number:STF10N
- Pin Count:3
- Configuration:SINGLE WITH BUILT-IN DIODE
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:30W
- Case Connection:ISOLATED
- Turn On Delay Time:14.5 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:750m Ω @ 4A, 10V
- Vgs(th) (Max) @ Id:4.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds:1250pF @ 50V
- Gate Charge (Qg) (Max) @ Vgs:42nC @ 10V
- Rise Time:15ns
- Vgs (Max):±30V
- Fall Time (Typ):31 ns
- Continuous Drain Current (ID):8.4A
- Threshold Voltage:3.75V
- JEDEC-95 Code:TO-220AB
- Gate to Source Voltage (Vgs):30V
- Drain-source On Resistance-Max:0.75Ohm
- Drain to Source Breakdown Voltage:620V
- Avalanche Energy Rating (Eas):220 mJ
- Height:16.4mm
- Length:10.4mm
- Width:4.6mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 22990
- 1+: $2.45384
- 10+: $2.31495
- 100+: $2.18391
- 500+: $2.06029
- 1000+: $1.94367
小計金額 $2.45384
類似スペック製品












