STB20NM60T4

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 600V 20A D2PAK
Date Sheet

在庫數 3000

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：26 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Power Dissipation (Max)：192W Tc
Turn Off Delay Time：42 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
Current - Continuous Drain (Id) @ 25℃：20A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Series：MDmesh™
Operating Temperature：150°C TJ
Packaging：Tape & Reel (TR)
JESD-609 Code：e3
Part Status：ACTIVE (Last Updated: 7 months ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：290mOhm
Terminal Finish：Matte Tin (Sn) - annealed
Voltage - Rated DC：650V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Current Rating：20A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STB20N
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：192W
Turn On Delay Time：25 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：290m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：54nC @ 10V
Rise Time：20ns
Vgs (Max)：±30V
Fall Time (Typ)：11 ns
Continuous Drain Current (ID)：20A
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：600V
Pulsed Drain Current-Max (IDM)：80A
Avalanche Energy Rating (Eas)：650 mJ
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 3000

小計金額 $0.00000

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STB20NM60T4