FDS6673BZ

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
ON SEMICONDUCTOR - FDS6673BZ - MOSFET Transistor, P Channel, 14.5 mA, -30 V, 0.0065 ohm, 10 V, 1.9 V
Date Sheet

在庫數 494220

1+： $1.24175
10+： $1.17147
100+： $1.10516
500+： $1.04260
1000+： $0.98359

小計金額 $1.24175

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：18 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：14.5A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta
Turn Off Delay Time：225 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2009
JESD-609 Code：e4
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Resistance：7.8MOhm
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Position：DUAL
Terminal Form：GULL WING
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：14 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：7.8m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：4700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：124nC @ 10V
Rise Time：16ns
Drain to Source Voltage (Vdss)：30V
Vgs (Max)：±25V
Fall Time (Typ)：105 ns
Continuous Drain Current (ID)：14.5mA
Threshold Voltage：-1.9V
Gate to Source Voltage (Vgs)：25V
Drain to Source Breakdown Voltage：-30V
Nominal Vgs：1.9 V
Feedback Cap-Max (Crss)：900 pF
Height：1.5mm
Length：5mm
Width：4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 494220

1+： $1.24175
10+： $1.17147
100+： $1.10516
500+： $1.04260
1000+： $0.98359

小計金額 $1.24175

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FDS6673BZ