TP5322N8-G

Microchip Technology
Transistors - FETs, MOSFETs - Single
TO-243AA
MOSFET,P-CHANNEL ENHANCEMENT-MODE,-220V,12 Ohm3 SOT-89T/R
Date Sheet

在庫數 6000

1+： $2.40676
10+： $2.27053
100+： $2.14201
500+： $2.02076
1000+： $1.90638

小計金額 $2.40676

仕様よくある質問

Factory Lead Time：18 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-243AA
Number of Pins：4
Weight：52.786812mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：260mA Tj
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：1.6W Ta
Turn Off Delay Time：20 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2013
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Resistance：12Ohm
Terminal Finish：Matte Tin (Sn)
Additional Feature：LOGIC LEVEL COMPATIBLE
Terminal Form：FLAT
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：40
JESD-30 Code：R-PSSO-F3
Qualification Status：Not Qualified
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：1.6W
Case Connection：DRAIN
Turn On Delay Time：10 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：12 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id：2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds：110pF @ 25V
Rise Time：15ns
Drain to Source Voltage (Vdss)：220V
Vgs (Max)：±20V
Fall Time (Typ)：15 ns
Continuous Drain Current (ID)：-260mA
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：0.26A
Drain to Source Breakdown Voltage：-220V
Pulsed Drain Current-Max (IDM)：0.9A
Height：1.6mm
Length：4.6mm
Width：2.6mm
RoHS Status：ROHS3 Compliant

在庫數 6000

1+： $2.40676
10+： $2.27053
100+： $2.14201
500+： $2.02076
1000+： $1.90638

小計金額 $2.40676

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TP5322N8-G