FDS6681Z

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
ON SEMICONDUCTOR - FDS6681Z - MOSFET Transistor, P Channel, -20 A, -30 V, 0.0038 ohm, -10 V, -1.8 V
Date Sheet

在庫數 2565

1+： $2.64323
10+： $2.49361
100+： $2.35247
500+： $2.21931
1000+： $2.09369

小計金額 $2.64323

仕様よくある質問

Factory Lead Time：18 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：20A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta
Turn Off Delay Time：660 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2005
JESD-609 Code：e4
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 1 day ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：4.6MOhm
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Rated DC：-30V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：-20A
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：20 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：4.6m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds：7540pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：260nC @ 10V
Rise Time：9ns
Vgs (Max)：±25V
Fall Time (Typ)：380 ns
Continuous Drain Current (ID)：-20A
Threshold Voltage：-1.8V
Gate to Source Voltage (Vgs)：25V
Drain to Source Breakdown Voltage：-30V
Dual Supply Voltage：30V
Max Junction Temperature (Tj)：150°C
Nominal Vgs：1.8 V
Height：1.75mm
Length：5mm
Width：4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 2565

1+： $2.64323
10+： $2.49361
100+： $2.35247
500+： $2.21931
1000+： $2.09369

小計金額 $2.64323

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FDS6681Z