IPD65R950C6ATMA1

Infineon Technologies
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; PG-TO252-3
Date Sheet

在庫數 88888

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：12 Weeks
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type：Surface Mount
Mount：Surface Mount
Number of Pins：3
Weight：3.949996g
Transistor Element Material：SILICON
Power Dissipation (Max)：37W Tc
Number of Elements：1
Drive Voltage (Max Rds On, Min Rds On)：10V
Current - Continuous Drain (Id) @ 25℃：4.5A Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3.5V @ 200μA
Turn Off Delay Time：41 ns
Packaging：Tape & Reel (TR)
Operating Temperature：-55°C~150°C TJ
Published：2008
Series：CoolMOS™ C6
JESD-609 Code：e3
Part Status：Not For New Designs
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Terminal Finish：Tin (Sn)
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
JESD-30 Code：R-PSSO-G2
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：37W
Turn On Delay Time：6.6 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：950m Ω @ 1.5A, 10V
Halogen Free：Halogen Free
Input Capacitance (Ciss) (Max) @ Vds：328pF @ 100V
Gate Charge (Qg) (Max) @ Vgs：15.3nC @ 10V
Rise Time：5.2ns
Vgs (Max)：±20V
Fall Time (Typ)：13.6 ns
Continuous Drain Current (ID)：4.5A
Gate to Source Voltage (Vgs)：20V
Max Dual Supply Voltage：650V
Drain-source On Resistance-Max：0.95Ohm
Drain to Source Breakdown Voltage：650V
Avalanche Energy Rating (Eas)：50 mJ
REACH SVHC：not_compliant
RoHS Status：ROHS3 Compliant
Lead Free：Contains Lead, Lead Free

在庫數 88888

小計金額 $0.00000

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IPD65R950C6ATMA1