IRLR8729TRLPBF

Infineon Technologies
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 30V 58A D-PAK
Date Sheet

在庫數 15013

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：52 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：58A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：55W Tc
Turn Off Delay Time：11 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2.35V @ 25μA
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：HEXFET®
Published：2004
JESD-609 Code：e3
Part Status：Not For New Designs
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：30
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：55W
Case Connection：DRAIN
Turn On Delay Time：10 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：8.9m Ω @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1350pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：16nC @ 4.5V
Rise Time：47ns
Vgs (Max)：±20V
Fall Time (Typ)：10 ns
Continuous Drain Current (ID)：58A
JEDEC-95 Code：TO-252AA
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：50A
Drain-source On Resistance-Max：0.0089Ohm
Drain to Source Breakdown Voltage：30V
Pulsed Drain Current-Max (IDM)：260A
Avalanche Energy Rating (Eas)：74 mJ
Height：2.26mm
Length：6.7056mm
Width：6.22mm
RoHS Status：ROHS3 Compliant

在庫數 15013

小計金額 $0.00000

類似スペック製品

IRLR8729TRLPBF Infineon Technologies
見積かごへ在庫數 15013
DMN3010LK3-13 Diodes Incorporated
見積かごへ在庫數 2500
IRLR7821PBF Infineon Technologies
見積かごへ在庫數 69
IRLR8729PBF Infineon Technologies
見積かごへ在庫數 1780

Phone

IRLR8729TRLPBF