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STD60NH03L-1
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-251-3 Short Leads, IPak, TO-251AA
- MOSFET N-CH 30V 60A I-PAK
Date Sheet
在庫數 9000
小計金額 $0.00000
仕様 よくある質問
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-251-3 Short Leads, IPak, TO-251AA
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：60A Tc
- Drive Voltage (Max Rds On, Min Rds On)：5V 10V
- Number of Elements：1
- Power Dissipation (Max)：70W Tc
- Turn Off Delay Time：19 ns
- Operating Temperature：-55°C~175°C TJ
- Packaging：Tube
- Series：STripFET™ III
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Additional Feature：LOW THRESHOLD
- Voltage - Rated DC：30V
- Peak Reflow Temperature (Cel)：260
- Current Rating：60A
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- Base Part Number：STD60N
- Pin Count：3
- JESD-30 Code：R-PSIP-T3
- Qualification Status：Not Qualified
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：70W
- Case Connection：DRAIN
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：9m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id：1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds：2200pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：21nC @ 5V
- Rise Time：95ns
- Vgs (Max)：±20V
- Fall Time (Typ)：15 ns
- Continuous Drain Current (ID)：60A
- Gate to Source Voltage (Vgs)：20V
- Drain-source On Resistance-Max：0.017Ohm
- Drain to Source Breakdown Voltage：30V
- Pulsed Drain Current-Max (IDM)：240A
- Avalanche Energy Rating (Eas)：300 mJ
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
在庫數 9000
小計金額 $0.00000
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