STN1NF10

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-261-4, TO-261AA
Trans MOSFET N-CH 100V 1A 4-Pin(3 Tab) SOT-223 T/R
Date Sheet

在庫數 16

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-261-4, TO-261AA
Number of Pins：3
Transistor Element Material：SILICON
Number of Elements：1
Power Dissipation (Max)：2.5W Tc
Current - Continuous Drain (Id) @ 25℃：1A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Turn Off Delay Time：13 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：STripFET™ II
JESD-609 Code：e3
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：4
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn)
Voltage - Rated DC：100V
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：1A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STN1N
JESD-30 Code：R-PDSO-G4
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：4 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：800m Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds：105pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：6nC @ 10V
Rise Time：5.5ns
Vgs (Max)：±20V
Fall Time (Typ)：6.5 ns
Continuous Drain Current (ID)：500mA
Threshold Voltage：3V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：1A
Drain-source On Resistance-Max：0.8Ohm
Drain to Source Breakdown Voltage：100V
Height：1.6mm
Length：6.7mm
Width：3.7mm
RoHS Status：ROHS3 Compliant
REACH SVHC：No SVHC
Radiation Hardening：No
Lead Free：Lead Free

在庫數 16

小計金額 $0.00000

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STN1NF10