NTP65N02R

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-220-3
MOSFET N-CH 25V 7.6A TO220AB
Date Sheet

在庫數 31518

小計金額 $0.00000

仕様よくある質問

Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：7.6A Ta 58A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：1.04W Ta 62.5W Tc
Turn Off Delay Time：14 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Published：2012
JESD-609 Code：e0
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Tin/Lead (Sn/Pb)
HTS Code：8541.29.00.95
Voltage - Rated DC：24V
Peak Reflow Temperature (Cel)：240
Reach Compliance Code：not_compliant
Current Rating：65A
Time@Peak Reflow Temperature-Max (s)：30
Pin Count：3
JESD-30 Code：R-PSFM-T3
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：62.5W
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：10.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1330pF @ 20V
Gate Charge (Qg) (Max) @ Vgs：9.5nC @ 4.5V
Rise Time：53ns
Drain to Source Voltage (Vdss)：25V
Vgs (Max)：±20V
Fall Time (Typ)：10 ns
Continuous Drain Current (ID)：58A
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：7.6A
Drain-source On Resistance-Max：0.0105Ohm
Drain to Source Breakdown Voltage：24V
Pulsed Drain Current-Max (IDM)：160A
Avalanche Energy Rating (Eas)：60 mJ
RoHS Status：Non-RoHS Compliant
Lead Free：Contains Lead

在庫數 31518

小計金額 $0.00000

類似スペック製品

NTP65N02R ON Semiconductor
見積かごへ在庫數 31518
NTP85N03 ON Semiconductor
見積かごへ在庫數 38658
NTP4302 ON Semiconductor
見積かごへ在庫數 32365
FDP8876 ON Semiconductor
見積かごへ在庫數 461

Phone

NTP65N02R