MTP2P50E

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-220-3
MOSFET P-CH 500V 2A TO-220AB
Date Sheet

在庫數 415

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：LAST SHIPMENTS (Last Updated: 5 days ago)
Package / Case：TO-220-3
Mounting Type：Through Hole
Mount：Through Hole
Number of Pins：3
Transistor Element Material：SILICON
Power Dissipation (Max)：75W Tc
Turn Off Delay Time：21 ns
Number of Elements：1
Drive Voltage (Max Rds On, Min Rds On)：10V
Current - Continuous Drain (Id) @ 25℃：2A Tc
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Published：2000
JESD-609 Code：e0
Pbfree Code：no
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Tin/Lead (Sn/Pb)
Additional Feature：HIGH VOLTAGE
Voltage - Rated DC：-500V
Peak Reflow Temperature (Cel)：240
Reach Compliance Code：not_compliant
Current Rating：-2A
Time@Peak Reflow Temperature-Max (s)：30
Pin Count：3
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：75W
Case Connection：DRAIN
Turn On Delay Time：12 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：6 Ω @ 1A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1183pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：27nC @ 10V
Rise Time：14ns
Drain to Source Voltage (Vdss)：500V
Vgs (Max)：±20V
Fall Time (Typ)：19 ns
Continuous Drain Current (ID)：2A
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：2A
Drain-source On Resistance-Max：6Ohm
Drain to Source Breakdown Voltage：-500V
Pulsed Drain Current-Max (IDM)：6A
Avalanche Energy Rating (Eas)：80 mJ
Length：10.28mm
Height：9.28mm
Width：4.82mm
RoHS Status：Non-RoHS Compliant
Lead Free：Contains Lead

在庫數 415

小計金額 $0.00000

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MTP2P50E