NTP18N06G

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-220-3
MOSFET N-CH 60V 15A TO220AB
Date Sheet

在庫數 2

小計金額 $0.00000

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Lifecycle Status：LAST SHIPMENTS (Last Updated: 2 days ago)
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：15A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：48.4W Tc
Turn Off Delay Time：14 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tube
Published：2005
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
Termination：Through Hole
Terminal Finish：Tin (Sn)
HTS Code：8541.29.00.95
Voltage - Rated DC：60V
Peak Reflow Temperature (Cel)：260
Current Rating：15A
Time@Peak Reflow Temperature-Max (s)：40
Pin Count：3
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：48.4W
Case Connection：DRAIN
Turn On Delay Time：10 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：90m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
Rise Time：25ns
Vgs (Max)：±20V
Fall Time (Typ)：13 ns
Continuous Drain Current (ID)：15A
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.09Ohm
Drain to Source Breakdown Voltage：60V
Pulsed Drain Current-Max (IDM)：45A
Dual Supply Voltage：60V
Avalanche Energy Rating (Eas)：61 mJ
Nominal Vgs：2.9 V
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：RoHS Compliant
Lead Free：Lead Free

在庫數 2

小計金額 $0.00000

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NTP18N06G