NTD18N06T4G

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 60V 18A DPAK
Date Sheet

在庫數 58763

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：18A Ta
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：2.1W Ta 55W Tj
Turn Off Delay Time：19 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Published：2006
JESD-609 Code：e3
Pbfree Code：yes
Part Status：LAST SHIPMENTS (Last Updated: 1 day ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Terminal Finish：Tin (Sn)
Voltage - Rated DC：60V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：18A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：55W
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：60m Ω @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds：710pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
Rise Time：23ns
Vgs (Max)：±20V
Fall Time (Typ)：20 ns
Continuous Drain Current (ID)：18A
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.06Ohm
Drain to Source Breakdown Voltage：60V
Pulsed Drain Current-Max (IDM)：54A
Avalanche Energy Rating (Eas)：72 mJ
RoHS Status：RoHS Compliant
Lead Free：Lead Free

在庫數 58763

小計金額 $0.00000

類似スペック製品

NTD18N06T4G ON Semiconductor
見積かごへ在庫數 58763
NTD20N06T4 ON Semiconductor
見積かごへ在庫數 32363
STD16NF06T4 STMicroelectronics
見積かごへ在庫數 322
RFD12N06RLESM9A ON Semiconductor
最低価格$1.706052 在庫數 7410

Phone

NTD18N06T4G