画像はあくまで参考です。
FDB2670
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- MOSFET N-CH 200V 19A TO-263AB
Date Sheet
在庫數 4059
- 1+: $1.52940
- 10+: $1.44283
- 100+: $1.36116
- 500+: $1.28412
- 1000+: $1.21143
小計金額 $1.52940
仕様 よくある質問
- Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Type:Surface Mount
- Mount:Surface Mount
- Supplier Device Package:TO-263AB
- Power Dissipation (Max):93W Tc
- Number of Elements:1
- Drive Voltage (Max Rds On, Min Rds On):10V
- Turn Off Delay Time:26 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4.5V @ 250μA
- Current - Continuous Drain (Id) @ 25℃:19A Ta
- Packaging:Tape & Reel (TR)
- Operating Temperature:-65°C~175°C TJ
- Series:PowerTrench®
- Published:2001
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Max Operating Temperature:175°C
- Min Operating Temperature:-65°C
- Voltage - Rated DC:200V
- Current Rating:19A
- Element Configuration:Single
- Power Dissipation:93W
- FET Type:N-Channel
- Rds On (Max) @ Id, Vgs:130mOhm @ 10A, 10V
- Input Capacitance (Ciss) (Max) @ Vds:1320pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs:38nC @ 10V
- Rise Time:5ns
- Drain to Source Voltage (Vdss):200V
- Vgs (Max):±20V
- Fall Time (Typ):23 ns
- Continuous Drain Current (ID):19A
- Gate to Source Voltage (Vgs):20V
- Drain to Source Breakdown Voltage:200V
- Input Capacitance:1.32nF
- Drain to Source Resistance:130mOhm
- Rds On Max:130 mΩ
- RoHS Status:RoHS Compliant
- Lead Free:Lead Free
在庫數 4059
- 1+: $1.52940
- 10+: $1.44283
- 100+: $1.36116
- 500+: $1.28412
- 1000+: $1.21143
小計金額 $1.52940
類似スペック製品












