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FCPF7N60YDTU
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-220-3 Full Pack, Formed Leads
- MOSFET N-CH 600V 7A TO-220F
Date Sheet
在庫數 1600
- 1+： $1.61622
- 10+： $1.52473
- 100+： $1.43843
- 500+： $1.35701
- 1000+： $1.28020
小計金額 $1.61622
仕様 よくある質問
- Factory Lead Time：12 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack, Formed Leads
- Number of Pins：3
- Weight：2.565g
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：7A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
- Number of Elements：1
- Power Dissipation (Max)：31W Tc
- Turn Off Delay Time：75 ns
- Published：2013
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Series：SuperFET™
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：ACTIVE (Last Updated: 3 days ago)
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：31W
- Case Connection：ISOLATED
- Turn On Delay Time：35 ns
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：600m Ω @ 3.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds：920pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
- Rise Time：55ns
- Vgs (Max)：±30V
- Fall Time (Typ)：32 ns
- Continuous Drain Current (ID)：7A
- JEDEC-95 Code：TO-220AB
- Gate to Source Voltage (Vgs)：30V
- Drain Current-Max (Abs) (ID)：7A
- Drain-source On Resistance-Max：0.6Ohm
- Drain to Source Breakdown Voltage：600V
- Height：16.07mm
- Length：10.36mm
- Width：4.9mm
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
在庫數 1600
- 1+： $1.61622
- 10+： $1.52473
- 100+： $1.43843
- 500+： $1.35701
- 1000+： $1.28020
小計金額 $1.61622
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