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FDD5810
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- MOSFET N-CH 60V 37A DPAK
Date Sheet
在庫數 760
小計金額 $0.00000
仕様 よくある質問
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：7.4A Ta 37A Tc
- Drive Voltage (Max Rds On, Min Rds On)：5V 10V
- Number of Elements：1
- Power Dissipation (Max)：72W Tc
- Turn Off Delay Time：26 ns
- Operating Temperature：-55°C~175°C TJ
- Packaging：Tape & Reel (TR)
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：2
- Terminal Finish：Tin (Sn)
- Voltage - Rated DC：60V
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Current Rating：35A
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- JESD-30 Code：R-PSSO-G2
- Qualification Status：Not Qualified
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：88W
- Case Connection：DRAIN
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：22m Ω @ 32A, 10V
- Vgs(th) (Max) @ Id：2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds：1890pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：34nC @ 10V
- Rise Time：75ns
- Vgs (Max)：±20V
- Fall Time (Typ)：34 ns
- Continuous Drain Current (ID)：37A
- JEDEC-95 Code：TO-252AA
- Gate to Source Voltage (Vgs)：20V
- Drain Current-Max (Abs) (ID)：7.4A
- Drain-source On Resistance-Max：0.022Ohm
- Drain to Source Breakdown Voltage：60V
- Avalanche Energy Rating (Eas)：45 mJ
- RoHS Status：RoHS Compliant
- Lead Free：Lead Free
在庫數 760
小計金額 $0.00000
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