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NTMS4800NR2G
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- 8-SOIC (0.154, 3.90mm Width)
- MOSFET N-CH 30V 4.9A 8-SOIC
Date Sheet
在庫數 6290
小計金額 $0.00000
仕様 よくある質問
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154, 3.90mm Width)
- Number of Pins：8
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：4.9A Ta
- Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
- Number of Elements：1
- Power Dissipation (Max)：750mW Ta
- Turn Off Delay Time：21 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3V @ 250μA
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tape & Reel (TR)
- Published：2008
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：OBSOLETE (Last Updated: 19 hours ago)
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：8
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：2W
- Case Connection：DRAIN
- Turn On Delay Time：9.4 ns
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：20m Ω @ 7.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds：940pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：7.7nC @ 4.5V
- Rise Time：4ns
- Vgs (Max)：±20V
- Fall Time (Typ)：6.5 ns
- Continuous Drain Current (ID)：6.4A
- Gate to Source Voltage (Vgs)：20V
- Drain Current-Max (Abs) (ID)：8A
- Drain-source On Resistance-Max：0.02Ohm
- Drain to Source Breakdown Voltage：30V
- Radiation Hardening：No
- RoHS Status：RoHS Compliant
- Lead Free：Lead Free
在庫數 6290
小計金額 $0.00000
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