NTB5605PG

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET P-CH 60V 18.5A D2PAK
Date Sheet

在庫數 52

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：OBSOLETE (Last Updated: 1 week ago)
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：18.5A Ta
Drive Voltage (Max Rds On, Min Rds On)：5V
Number of Elements：1
Power Dissipation (Max)：88W Tc
Turn Off Delay Time：29 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tube
Published：2005
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Voltage - Rated DC：-60V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：-18.5A
Time@Peak Reflow Temperature-Max (s)：40
Pin Count：3
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：88W
Case Connection：DRAIN
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：140m Ω @ 8.5A, 5V
Vgs(th) (Max) @ Id：2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1190pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：22nC @ 5V
Rise Time：122ns
Drain to Source Voltage (Vdss)：60V
Vgs (Max)：±20V
Fall Time (Typ)：75 ns
Continuous Drain Current (ID)：18.5A
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：17A
Drain-source On Resistance-Max：0.14Ohm
Drain to Source Breakdown Voltage：-60V
Pulsed Drain Current-Max (IDM)：55A
RoHS Status：RoHS Compliant
Lead Free：Lead Free

在庫數 52

小計金額 $0.00000

類似スペック製品

NTB5605PG ON Semiconductor
見積かごへ在庫數 52
IRF9Z34NSTRLPBF Infineon Technologies
最低価格$2.247332 在庫數 14053

Phone

NTB5605PG