FDB7030BL

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Trans MOSFET N-CH 30V 60A 3-Pin(2 Tab) D2PAK T/R
Date Sheet

在庫數 21835

1+： $0.61606
10+： $0.58118
100+： $0.54829
500+： $0.51725
1000+： $0.48797

小計金額 $0.61606

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Contact Plating：Tin
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Weight：1.31247g
Transistor Element Material：SILICON
Number of Elements：1
Current - Continuous Drain (Id) @ 25℃：60A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Power Dissipation (Max)：60W Tc
Turn Off Delay Time：30 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3V @ 250μA
Operating Temperature：-65°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2003
JESD-609 Code：e3
Pbfree Code：yes
Part Status：LAST SHIPMENTS (Last Updated: 1 day ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：9MOhm
Additional Feature：LOGIC LEVEL COMPATIBLE
Voltage - Rated DC：30V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：60A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：60W
Case Connection：DRAIN
Turn On Delay Time：12 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：9m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1760pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：24nC @ 5V
Rise Time：12ns
Vgs (Max)：±20V
Fall Time (Typ)：19 ns
Continuous Drain Current (ID)：60A
Threshold Voltage：1.9V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：30V
Height：4.83mm
Length：10.67mm
Width：9.65mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 21835

1+： $0.61606
10+： $0.58118
100+： $0.54829
500+： $0.51725
1000+： $0.48797

小計金額 $0.61606

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FDB7030BL