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NDD02N40-1G
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-251-3 Short Leads, IPak, TO-251AA
- MOSFET NFET DPAK 400V 1.7A 5.5OH
Date Sheet
在庫數 336
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status：LAST SHIPMENTS (Last Updated: 19 hours ago)
- Factory Lead Time：18 Weeks
- Mounting Type：Through Hole
- Package / Case：TO-251-3 Short Leads, IPak, TO-251AA
- Surface Mount：NO
- Number of Pins：4
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：1.7A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Power Dissipation (Max)：39W Tc
- Turn Off Delay Time：14 ns
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Published：2010
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：3 (168 Hours)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Pin Count：4
- JESD-30 Code：R-PSIP-T3
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：39W
- Case Connection：DRAIN
- Turn On Delay Time：5 ns
- FET Type：N-Channel
- Rds On (Max) @ Id, Vgs：5.5 Ω @ 220mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250μA
- Halogen Free：Halogen Free
- Input Capacitance (Ciss) (Max) @ Vds：121pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：5.5nC @ 10V
- Rise Time：7ns
- Vgs (Max)：±20V
- Fall Time (Typ)：4 ns
- Continuous Drain Current (ID)：1.7A
- Gate to Source Voltage (Vgs)：20V
- Drain-source On Resistance-Max：0.0055Ohm
- Drain to Source Breakdown Voltage：400V
- Pulsed Drain Current-Max (IDM)：6.9A
- Radiation Hardening：No
- RoHS Status：RoHS Compliant
- Lead Free：Lead Free
在庫數 336
小計金額 $0.00000
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