FJV3103RMTF

ON Semiconductor
Transistors - Bipolar (BJT) - Single, Pre-Biased
TO-236-3, SC-59, SOT-23-3
Transistors Switching - Resistor Biased 50V/100mA/22K 22K
Date Sheet

在庫數 75000

1+： $0.17671
10+： $0.16671
100+： $0.15727
500+： $0.14837
1000+： $0.13997

小計金額 $0.17671

仕様よくある質問

Lifecycle Status：LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Number of Pins：3
Weight：30mg
Collector-Emitter Breakdown Voltage：50V
Collector-Emitter Saturation Voltage：300mV
Number of Elements：1
hFEMin：56
Packaging：Tape & Reel (TR)
Published：2013
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Max Operating Temperature：150°C
Min Operating Temperature：-55°C
Additional Feature：BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code：8541.21.00.95
Voltage - Rated DC：50V
Max Power Dissipation：200mW
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：100mA
Base Part Number：FJV3103
Polarity：NPN
Element Configuration：Single
Power Dissipation：200mW
Transistor Application：SWITCHING
Transistor Type：NPN - Pre-Biased
Collector Emitter Voltage (VCEO)：50V
Max Collector Current：100mA
DC Current Gain (hFE) (Min) @ Ic, Vce：56 @ 5mA 5V
Current - Collector Cutoff (Max)：100nA ICBO
Vce Saturation (Max) @ Ib, Ic：300mV @ 500μA, 10mA
Transition Frequency：250MHz
Max Breakdown Voltage：50V
Frequency - Transition：250MHz
Collector Base Voltage (VCBO)：50V
Emitter Base Voltage (VEBO)：10V
Resistor - Base (R1)：22 k Ω
Continuous Collector Current：100mA
Resistor - Emitter Base (R2)：22 k Ω
Height：930μm
Length：2.92mm
Width：1.3mm
Radiation Hardening：No
RoHS Status：RoHS Compliant
Lead Free：Lead Free

在庫數 75000

1+： $0.17671
10+： $0.16671
100+： $0.15727
500+： $0.14837
1000+： $0.13997

小計金額 $0.17671

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FJV3103RMTF