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FJV4114RMTF
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single, Pre-Biased
- TO-236-3, SC-59, SOT-23-3
- Transistors Switching - Resistor Biased 50/100mA/4.7K 47K
Date Sheet
在庫數 230
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status：LAST SHIPMENTS (Last Updated: 1 week ago)
- Factory Lead Time：14 Weeks
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Number of Pins：3
- Weight：30mg
- Collector-Emitter Breakdown Voltage：50V
- Number of Elements：1
- hFEMin：68
- Packaging：Tape & Reel (TR)
- Published：2015
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Max Operating Temperature：150°C
- Min Operating Temperature：-55°C
- Additional Feature：BUILT IN BIAS RESISTOR RATIO IS 10
- HTS Code：8541.21.00.95
- Voltage - Rated DC：-50V
- Max Power Dissipation：200mW
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Current Rating：-100mA
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- Base Part Number：FJV4114
- Qualification Status：Not Qualified
- Polarity：PNP
- Element Configuration：Single
- Power Dissipation：200mW
- Transistor Application：SWITCHING
- Transistor Type：PNP - Pre-Biased
- Collector Emitter Voltage (VCEO)：50V
- Max Collector Current：100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：68 @ 5mA 5V
- Current - Collector Cutoff (Max)：100nA ICBO
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500μA, 10mA
- Transition Frequency：200MHz
- Max Breakdown Voltage：50V
- Frequency - Transition：200MHz
- Collector Base Voltage (VCBO)：50V
- Emitter Base Voltage (VEBO)：10V
- Resistor - Base (R1)：4.7 k Ω
- Continuous Collector Current：-100mA
- Resistor - Emitter Base (R2)：47 k Ω
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
在庫數 230
小計金額 $0.00000
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