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2N5639
-
ON Semiconductor
-
Transistors - JFETs
- TO-226-3, TO-92-3 (TO-226AA)
- JFET N-CH 35V 0.31W TO92
Date Sheet
在庫數 17479
- 1+: $0.39779
- 10+: $0.37527
- 100+: $0.35403
- 500+: $0.33399
- 1000+: $0.31509
小計金額 $0.39779
仕様 よくある質問
- Lifecycle Status:OBSOLETE (Last Updated: 2 days ago)
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-226-3, TO-92-3 (TO-226AA)
- Number of Pins:3
- Weight:201mg
- Transistor Element Material:SILICON
- Breakdown Voltage / V:-30V
- Number of Elements:1
- Operating Temperature:-65°C~150°C TJ
- Packaging:Bulk
- Published:2003
- JESD-609 Code:e0
- Pbfree Code:no
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Tin/Lead (Sn/Pb)
- HTS Code:8541.21.00.95
- Voltage - Rated DC:30V
- Max Power Dissipation:310mW
- Terminal Position:BOTTOM
- Peak Reflow Temperature (Cel):240
- Reach Compliance Code:not_compliant
- Current Rating:10mA
- Time@Peak Reflow Temperature-Max (s):30
- Base Part Number:2N5639
- Pin Count:3
- Qualification Status:Not Qualified
- Element Configuration:Single
- Operating Mode:DEPLETION MODE
- Power Dissipation:625mW
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds:10pF @ 12V VGS
- Continuous Drain Current (ID):25mA
- Gate to Source Voltage (Vgs):-30V
- Drain to Source Breakdown Voltage:30V
- FET Technology:JUNCTION
- Drain to Source Resistance:60Ohm
- Feedback Cap-Max (Crss):4 pF
- Current - Drain (Idss) @ Vds (Vgs=0):25mA @ 20V
- Voltage - Breakdown (V(BR)GSS):35V
- Resistance - RDS(On):60Ohm
- RoHS Status:Non-RoHS Compliant
- Lead Free:Lead Free
在庫數 17479
- 1+: $0.39779
- 10+: $0.37527
- 100+: $0.35403
- 500+: $0.33399
- 1000+: $0.31509
小計金額 $0.39779
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