BAS21LT1G

ON Semiconductor
Diodes - Rectifiers - Single
TO-236-3, SC-59, SOT-23-3
DIODE GEN PURP 250V 200MA SOT23
Date Sheet

在庫數 39000

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：4 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Number of Pins：3
Diode Element Material：SILICON
Breakdown Voltage / V：250V
Operating Temperature (Max)：150°C
Operating Temperature (Min)：-55°C
Number of Elements：1
Packaging：Cut Tape (CT)
Published：2004
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 4 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
HTS Code：8541.10.00.70
Capacitance：5pF
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：200mA
Time@Peak Reflow Temperature-Max (s)：40
Base Part Number：BAS21L
Element Configuration：Dual
Speed：Small Signal =< 200mA (Io), Any Speed
Diode Type：Standard
Current - Reverse Leakage @ Vr：100nA @ 200V
Power Dissipation：385mW
Voltage - Forward (Vf) (Max) @ If：1.25V @ 200mA
Current - Output：200mA
Forward Current：200mA
Max Reverse Leakage Current：100nA
Operating Temperature - Junction：-55°C~150°C
Max Surge Current：625mA
Halogen Free：Halogen Free
Current - Average Rectified (Io)：200mA DC
Forward Voltage：1.25V
Max Reverse Voltage (DC)：250V
Average Rectified Current：200mA
Reverse Recovery Time：50 ns
Peak Reverse Current：100nA
Max Repetitive Reverse Voltage (Vrrm)：250V
Capacitance @ Vr, F：5pF @ 0V 1MHz
Peak Non-Repetitive Surge Current：625mA
Max Forward Surge Current (Ifsm)：625mA
Recovery Time：50 ns
Height：940μm
Length：2.9mm
Width：1.3mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 39000

小計金額 $0.00000

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BAS21LT1G