BAS19LT1G

ON Semiconductor
Diodes - Rectifiers - Single
TO-236-3, SC-59, SOT-23-3
DIODE GEN PURP 120V 200MA SOT23
Date Sheet

在庫數 6000

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：4 Weeks
Surface Mount：YES
Package / Case：TO-236-3, SC-59, SOT-23-3
Mounting Type：Surface Mount
Contact Plating：Tin
Number of Pins：3
Diode Element Material：SILICON
Number of Elements：1
Operating Temperature (Min)：-55°C
Operating Temperature (Max)：150°C
Breakdown Voltage / V：120V
Packaging：Cut Tape (CT)
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
HTS Code：8541.10.00.70
Capacitance：5pF
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：40
Base Part Number：BAS19
Element Configuration：Single
Speed：Small Signal =< 200mA (Io), Any Speed
Diode Type：Standard
Current - Reverse Leakage @ Vr：100nA @ 100V
Power Dissipation：385mW
Voltage - Forward (Vf) (Max) @ If：1.25V @ 200mA
Current - Output：200mA
Forward Current：200mA
Max Reverse Leakage Current：100nA
Operating Temperature - Junction：-55°C~150°C
Max Surge Current：625mA
Halogen Free：Halogen Free
Current - Average Rectified (Io)：200mA DC
Forward Voltage：1.25V
Max Reverse Voltage (DC)：120V
Average Rectified Current：200mA
Reverse Recovery Time：50 ns
Peak Reverse Current：100nA
Max Repetitive Reverse Voltage (Vrrm)：120V
Capacitance @ Vr, F：5pF @ 0V 1MHz
Peak Non-Repetitive Surge Current：625mA
Max Forward Surge Current (Ifsm)：625mA
Recovery Time：50 ns
Width：1.3mm
Length：2.9mm
Height：940μm
RoHS Status：ROHS3 Compliant
Radiation Hardening：No
REACH SVHC：No SVHC
Lead Free：Lead Free

在庫數 6000

小計金額 $0.00000

類似スペック製品

BAS19LT1G ON Semiconductor
見積かごへ在庫數 6000
BAS20LT3G ON Semiconductor
見積かごへ在庫數 20626
BAS21LT3G ON Semiconductor
見積かごへ在庫數 48072
BAS20LT1G ON Semiconductor
見積かごへ在庫數 24000

Phone

BAS19LT1G