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BAS20LT3G
-
ON Semiconductor
-
Diodes - Rectifiers - Single
- TO-236-3, SC-59, SOT-23-3
- DIODE GEN PURP 200V 200MA SOT23
Date Sheet
在庫數 20626
小計金額 $0.00000
仕様 よくある質問
- Factory Lead Time：4 Weeks
- Contact Plating：Tin
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Surface Mount：YES
- Number of Pins：3
- Diode Element Material：SILICON
- Operating Temperature (Max)：150°C
- Operating Temperature (Min)：-55°C
- Number of Elements：1
- Packaging：Tape & Reel (TR)
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：ACTIVE (Last Updated: 4 days ago)
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- HTS Code：8541.10.00.70
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Base Part Number：BAS20
- Element Configuration：Single
- Speed：Small Signal =< 200mA (Io), Any Speed
- Diode Type：Standard
- Current - Reverse Leakage @ Vr：100nA @ 150V
- Power Dissipation：300mW
- Voltage - Forward (Vf) (Max) @ If：1.25V @ 200mA
- Forward Current：200mA
- Max Reverse Leakage Current：100nA
- Operating Temperature - Junction：-55°C~150°C
- Max Surge Current：625mA
- Output Current-Max：0.2A
- Current - Average Rectified (Io)：200mA DC
- Forward Voltage：1.25V
- Max Reverse Voltage (DC)：200V
- Average Rectified Current：200mA
- Reverse Recovery Time：50 ns
- Max Repetitive Reverse Voltage (Vrrm)：200V
- Capacitance @ Vr, F：5pF @ 0V 1MHz
- Peak Non-Repetitive Surge Current：625mA
- Max Forward Surge Current (Ifsm)：625mA
- Recovery Time：50 ns
- Height：1.01mm
- Length：3.04mm
- Width：1.4mm
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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