STGF10NB60SD

STMicroelectronics
Transistors - IGBTs - Single
TO-220-3 Full Pack
STMICROELECTRONICS STGF10NB60SD IGBT Single Transistor, 20 A, 1.8 V, 25 W, 600 V, TO-220FP, 3 Pins
Date Sheet

在庫數 3000

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
Factory Lead Time：8 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Number of Pins：3
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：600V
Collector-Emitter Saturation Voltage：1.8V
Number of Elements：1
Test Conditions：480V, 10A, 1k Ω, 15V
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：PowerMESH™
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn) - annealed
Voltage - Rated DC：600V
Max Power Dissipation：25W
Current Rating：10A
Base Part Number：STGF10
Pin Count：3
Element Configuration：Single
Power Dissipation：25W
Case Connection：ISOLATED
Input Type：Standard
Transistor Application：POWER CONTROL
Rise Time：460ns
Drain to Source Voltage (Vdss)：600V
Polarity/Channel Type：N-CHANNEL
Collector Emitter Voltage (VCEO)：600V
Max Collector Current：23A
Reverse Recovery Time：37ns
Continuous Drain Current (ID)：20A
JEDEC-95 Code：TO-220AB
Max Breakdown Voltage：600V
Turn On Time：1160 ns
Vce(on) (Max) @ Vge, Ic：1.75V @ 15V, 10A
Turn Off Time-Nom (toff)：3100 ns
Gate Charge：33nC
Current - Collector Pulsed (Icm)：80A
Td (on/off) @ 25°C：700ns/1.2μs
Switching Energy：600μJ (on), 5mJ (off)
Gate-Emitter Voltage-Max：20V
Gate-Emitter Thr Voltage-Max：5V
Height：20mm
Length：10.4mm
Width：4.6mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 3000

小計金額 $0.00000

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STGF10NB60SD