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STGP30V60DF
-
STMicroelectronics
-
Transistors - IGBTs - Single
- TO-220-3
- IGBT 600V 60A 258W TO220AB
Date Sheet
在庫數 391
小計金額 $0.00000
仕様 よくある質問
- Factory Lead Time:20 Weeks
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Number of Pins:3
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:600V
- Collector-Emitter Saturation Voltage:2.35V
- Number of Elements:1
- Test Conditions:400V, 30A, 10 Ω, 15V
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tube
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Max Power Dissipation:258W
- Base Part Number:STGP30
- Element Configuration:Single
- Power Dissipation:258W
- Case Connection:COLLECTOR
- Input Type:Standard
- Transistor Application:POWER CONTROL
- Polarity/Channel Type:N-CHANNEL
- Collector Emitter Voltage (VCEO):600V
- Max Collector Current:60A
- Reverse Recovery Time:53ns
- JEDEC-95 Code:TO-220AB
- Turn On Time:59 ns
- Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 30A
- Turn Off Time-Nom (toff):225 ns
- IGBT Type:Trench Field Stop
- Gate Charge:163nC
- Current - Collector Pulsed (Icm):120A
- Td (on/off) @ 25°C:45ns/189ns
- Switching Energy:383μJ (on), 233μJ (off)
- Gate-Emitter Voltage-Max:20V
- Height:15.75mm
- Length:10.4mm
- Width:4.6mm
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
在庫數 391
小計金額 $0.00000
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