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ULN2802A
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STMicroelectronics
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Transistors - Bipolar (BJT) - Arrays
- 18-DIP (0.300, 7.62mm)
- STMICROELECTRONICS - ULN2802A - Bipolares (BJT) Transistor-Array, Darlington, NPN, 50V, 2.25W, 500mA, hFE 1000, PDIP-18
Date Sheet
在庫數 8523
小計金額 $0.00000
仕様 よくある質問
- Factory Lead Time:15 Weeks
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:18-DIP (0.300, 7.62mm)
- Number of Pins:18
- Weight:1.270087g
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:50V
- Collector-Emitter Saturation Voltage:1.1V
- Number of Elements:8
- Operating Temperature:-20°C~150°C TJ
- Packaging:Tube
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:18
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:50V
- Max Power Dissipation:2.25W
- Terminal Position:DUAL
- Current Rating:500mA
- Base Part Number:ULN2802
- Pin Count:18
- Output Voltage:50V
- Polarity:NPN
- Configuration:COMPLEX
- Output Current:500mA
- Transistor Type:8 NPN Darlington
- Collector Emitter Voltage (VCEO):50V
- Max Collector Current:500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 350mA 2V
- Vce Saturation (Max) @ Ib, Ic:1.6V @ 500μA, 350mA
- Continuous Collector Current:500mA
- VCEsat-Max:1.6 V
- Height:3.68mm
- Length:23.24mm
- Width:7.1mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free












