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2STF2360
-
STMicroelectronics
-
Transistors - Bipolar (BJT) - Single
- TO-243AA
- STMICROELECTRONICS 2STF2360Bipolar (BJT) Single Transistor, PNP, 60 V, 130 MHz, 1.4 W, -3 A, 160
Date Sheet
在庫數 2312
- 1+: $0.71283
- 10+: $0.67248
- 100+: $0.63442
- 500+: $0.59851
- 1000+: $0.56463
小計金額 $0.71283
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time:8 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-243AA
- Number of Pins:3
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:60V
- Collector-Emitter Saturation Voltage:-300mV
- Current-Collector (Ic) (Max):3A
- Number of Elements:1
- hFEMin:160
- Operating Temperature:150°C TJ
- Packaging:Tape & Reel (TR)
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- Termination:SMD/SMT
- ECCN Code:EAR99
- Max Power Dissipation:1.4W
- Terminal Form:FLAT
- Peak Reflow Temperature (Cel):260
- Frequency:130MHz
- Time@Peak Reflow Temperature-Max (s):30
- Base Part Number:2STF23
- Pin Count:3
- Element Configuration:Single
- Power Dissipation:1.4W
- Case Connection:COLLECTOR
- Transistor Application:SWITCHING
- Gain Bandwidth Product:130MHz
- Polarity/Channel Type:PNP
- Transistor Type:PNP
- Collector Emitter Voltage (VCEO):-60V
- Max Collector Current:-3A
- DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 1A 2V
- Current - Collector Cutoff (Max):100nA ICBO
- Vce Saturation (Max) @ Ib, Ic:500mV @ 150mA, 3A
- Transition Frequency:130MHz
- Max Breakdown Voltage:60V
- Collector Base Voltage (VCBO):-60V
- Emitter Base Voltage (VEBO):-6V
- Max Junction Temperature (Tj):150°C
- Height:1.6mm
- Length:4.6mm
- Width:2.6mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 2312
- 1+: $0.71283
- 10+: $0.67248
- 100+: $0.63442
- 500+: $0.59851
- 1000+: $0.56463
小計金額 $0.71283
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