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BC638TA
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- BC638 Series PNP 60 V 1 W Through Hole Epitaxial Silicon Transistor - TO-92-3
Date Sheet
在庫數 52816
- 1+： $0.30903
- 10+： $0.29154
- 100+： $0.27503
- 500+： $0.25947
- 1000+： $0.24478
小計金額 $0.30903
仕様 よくある質問
- Lifecycle Status：ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time：6 Weeks
- Contact Plating：Tin
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins：3
- Weight：240mg
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：60V
- Collector-Emitter Saturation Voltage：-500mV
- Number of Elements：1
- hFEMin：40
- Operating Temperature：150°C TJ
- Packaging：Tape & Box (TB)
- Published：2007
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Voltage - Rated DC：-60V
- Max Power Dissipation：1W
- Terminal Position：BOTTOM
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Current Rating：-1A
- Frequency：100MHz
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- Base Part Number：BC638
- Qualification Status：Not Qualified
- Element Configuration：Single
- Power Dissipation：1W
- Transistor Application：SWITCHING
- Gain Bandwidth Product：100MHz
- Polarity/Channel Type：PNP
- Transistor Type：PNP
- Collector Emitter Voltage (VCEO)：60V
- Max Collector Current：1A
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA 2V
- Current - Collector Cutoff (Max)：100nA ICBO
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Transition Frequency：100MHz
- Max Breakdown Voltage：60V
- Collector Base Voltage (VCBO)：-60V
- Emitter Base Voltage (VEBO)：-5V
- Height：4.58mm
- Length：4.58mm
- Width：3.86mm
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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