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BCV27
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-236-3, SC-59, SOT-23-3
- TRANS NPN DARL 30V 1.2A SOT23
Date Sheet
在庫數 912000
- 1+: $0.28028
- 10+: $0.26441
- 100+: $0.24945
- 500+: $0.23533
- 1000+: $0.22201
小計金額 $0.28028
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time:17 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Number of Pins:3
- Weight:30mg
- Transistor Element Material:SILICON
- hFEMin:10000
- Collector-Emitter Breakdown Voltage:30V
- Collector-Emitter Saturation Voltage:1V
- Power Dissipation (Max):350mW
- Number of Elements:1
- Published:2013
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Voltage - Rated DC:30V
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Current Rating:1.2A
- Base Part Number:BCV27
- Polarity:NPN
- Element Configuration:Single
- Power Dissipation:350mW
- Transistor Type:NPN - Darlington
- Collector Emitter Voltage (VCEO):30V
- Max Collector Current:1.2A
- DC Current Gain (hFE) (Min) @ Ic, Vce:20000 @ 100mA 5V
- Current - Collector Cutoff (Max):100nA ICBO
- Vce Saturation (Max) @ Ib, Ic:1V @ 100μA, 100mA
- Transition Frequency:220MHz
- Max Breakdown Voltage:30V
- Frequency - Transition:220MHz
- Collector Base Voltage (VCBO):40V
- Emitter Base Voltage (VEBO):10V
- Width:1.3mm
- Height:930μm
- Length:2.92mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 912000
- 1+: $0.28028
- 10+: $0.26441
- 100+: $0.24945
- 500+: $0.23533
- 1000+: $0.22201
小計金額 $0.28028
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