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TIP122G
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-220-3
- Darlington Transistors 5A 100V Bipolar Power NPN
Date Sheet
在庫數 4966
- 1+: $1.34014
- 10+: $1.26429
- 100+: $1.19272
- 500+: $1.12521
- 1000+: $1.06152
小計金額 $1.34014
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time:8 Weeks
- Contact Plating:Tin
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Surface Mount:NO
- Number of Pins:3
- Weight:4.535924g
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:100V
- Collector-Emitter Saturation Voltage:2V
- Number of Elements:1
- hFEMin:1000
- Operating Temperature:-65°C~150°C TJ
- Packaging:Tube
- Published:2005
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Additional Feature:LEADFORM OPTIONS ARE AVAILABLE
- Voltage - Rated DC:100V
- Max Power Dissipation:2W
- Peak Reflow Temperature (Cel):260
- Current Rating:5A
- Time@Peak Reflow Temperature-Max (s):40
- Base Part Number:TIP12*
- Pin Count:3
- Polarity:NPN
- Element Configuration:Single
- Power Dissipation:65W
- Case Connection:COLLECTOR
- Transistor Application:AMPLIFIER
- Transistor Type:NPN - Darlington
- Collector Emitter Voltage (VCEO):100V
- Max Collector Current:5A
- DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 3A 3V
- Current - Collector Cutoff (Max):500μA
- JEDEC-95 Code:TO-220AB
- Vce Saturation (Max) @ Ib, Ic:4V @ 20mA, 5A
- Transition Frequency:4MHz
- Collector Base Voltage (VCBO):100V
- Emitter Base Voltage (VEBO):5V
- Continuous Collector Current:5A
- Height:15.748mm
- Length:10.2616mm
- Width:4.826mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 4966
- 1+: $1.34014
- 10+: $1.26429
- 100+: $1.19272
- 500+: $1.12521
- 1000+: $1.06152
小計金額 $1.34014











