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MJF122G
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-220-3 Full Pack
- Darlington Transistors 5A 100V Bipolar Power NPN
Date Sheet
在庫數 135800
- 1+： $1.38728
- 10+： $1.30876
- 100+： $1.23468
- 500+： $1.16479
- 1000+： $1.09886
小計金額 $1.38728
仕様 よくある質問
- Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time：8 Weeks
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Surface Mount：NO
- Number of Pins：3
- Weight：2.299997g
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：100V
- Collector-Emitter Saturation Voltage：2V
- Number of Elements：1
- hFEMin：1000
- Operating Temperature：-65°C~150°C TJ
- Packaging：Tube
- Published：2004
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Additional Feature：UL RECOGNIZED
- Voltage - Rated DC：100V
- Max Power Dissipation：30W
- Peak Reflow Temperature (Cel)：260
- Current Rating：5A
- Time@Peak Reflow Temperature-Max (s)：40
- Pin Count：3
- Polarity：NPN
- Element Configuration：Single
- Power Dissipation：2W
- Case Connection：ISOLATED
- Transistor Application：SWITCHING
- Transistor Type：NPN - Darlington
- Collector Emitter Voltage (VCEO)：100V
- Max Collector Current：5A
- DC Current Gain (hFE) (Min) @ Ic, Vce：2000 @ 3A 3V
- Current - Collector Cutoff (Max)：10μA
- JEDEC-95 Code：TO-220AB
- Vce Saturation (Max) @ Ib, Ic：3.5V @ 20mA, 5A
- Collector Base Voltage (VCBO)：100V
- Emitter Base Voltage (VEBO)：5V
- Continuous Collector Current：5A
- Height：9.24mm
- Length：10.63mm
- Width：4.9mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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