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BD675G
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-225AA, TO-126-3
- Trans Darlington NPN 45V 4A 3-Pin(3 Tab) TO-225 Box
Date Sheet
在庫數 307
- 1+: $0.35551
- 10+: $0.33538
- 100+: $0.31640
- 500+: $0.29849
- 1000+: $0.28159
小計金額 $0.35551
仕様 よくある質問
- Factory Lead Time:14 Weeks
- Lifecycle Status:ACTIVE (Last Updated: 1 week ago)
- Surface Mount:NO
- Package / Case:TO-225AA, TO-126-3
- Mounting Type:Through Hole
- Number of Pins:3
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:45V
- Collector-Emitter Saturation Voltage:2.5V
- hFEMin:750
- Number of Elements:1
- Published:2005
- Packaging:Bulk
- Operating Temperature:-55°C~150°C TJ
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:45V
- Max Power Dissipation:40W
- Peak Reflow Temperature (Cel):260
- Current Rating:4A
- Time@Peak Reflow Temperature-Max (s):40
- Base Part Number:BD675
- Pin Count:3
- Polarity:NPN
- Element Configuration:Single
- Power Dissipation:40W
- Transistor Application:AMPLIFIER
- Halogen Free:Halogen Free
- Transistor Type:NPN - Darlington
- Collector Emitter Voltage (VCEO):45V
- Max Collector Current:4A
- DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A 3V
- Current - Collector Cutoff (Max):500μA
- Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
- Transition Frequency:1MHz
- Collector Base Voltage (VCBO):45V
- Emitter Base Voltage (VEBO):5V
- Width:2.66mm
- Length:7.74mm
- Height:11.04mm
- RoHS Status:ROHS3 Compliant
- Radiation Hardening:No
- REACH SVHC:No SVHC
- Lead Free:Lead Free











