日本語
人気検索：
(0)
画像はあくまで参考です。
BC558BTA
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- BC558 Series 30 V 100 mA Through Hole PNP Epitaxial Silicon Transistor - TO-92-3
Date Sheet
在庫數 395
小計金額 $0.00000
仕様 よくある質問
- Factory Lead Time：7 Weeks
- Contact Plating：Tin
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins：3
- Weight：240mg
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：30V
- Collector-Emitter Saturation Voltage：-250mV
- Number of Elements：1
- hFEMin：110
- Operating Temperature：150°C TJ
- Packaging：Tape & Box (TB)
- Published：2007
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Voltage - Rated DC：-30V
- Max Power Dissipation：500mW
- Terminal Position：BOTTOM
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Current Rating：-100mA
- Frequency：150MHz
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- Base Part Number：BC558
- Qualification Status：Not Qualified
- Element Configuration：Single
- Power Dissipation：500mW
- Transistor Application：SWITCHING
- Gain Bandwidth Product：150MHz
- Polarity/Channel Type：PNP
- Transistor Type：PNP
- Collector Emitter Voltage (VCEO)：30V
- Max Collector Current：100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA 5V
- Current - Collector Cutoff (Max)：15nA ICBO
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Transition Frequency：150MHz
- Max Breakdown Voltage：30V
- Collector Base Voltage (VCBO)：-30V
- Emitter Base Voltage (VEBO)：-5V
- Height：5.33mm
- Length：5.2mm
- Width：4.19mm
- REACH SVHC：No SVHC
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
サポートセンター
購入サービス
プライバシーと規約
Kynix について
お問合せ
