BC33825TA

ON Semiconductor
Transistors - Bipolar (BJT) - Single
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Trans GP BJT NPN 25V 0.8A 3-Pin TO-92 Ammo
Date Sheet

在庫數 23550

1+： $0.24071
10+： $0.22708
100+： $0.21423
500+： $0.20210
1000+： $0.19066

小計金額 $0.24071

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 4 days ago)
Factory Lead Time：2 Weeks
Contact Plating：Tin
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins：3
Weight：240mg
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：25V
Collector-Emitter Saturation Voltage：700mV
Number of Elements：1
hFEMin：100
Operating Temperature：150°C TJ
Packaging：Tape & Box (TB)
Published：2002
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Voltage - Rated DC：25V
Max Power Dissipation：625mW
Terminal Position：BOTTOM
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：800mA
Frequency：100MHz
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Base Part Number：BC338
Qualification Status：Not Qualified
Element Configuration：Single
Power Dissipation：625mW
Transistor Application：SWITCHING
Gain Bandwidth Product：100MHz
Polarity/Channel Type：NPN
Transistor Type：NPN
Collector Emitter Voltage (VCEO)：25V
Max Collector Current：800mA
DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 100mA 1V
Current - Collector Cutoff (Max)：100nA
Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
Transition Frequency：100MHz
Max Breakdown Voltage：25V
Collector Base Voltage (VCBO)：10V
Emitter Base Voltage (VEBO)：5V
Height：4.58mm
Length：4.58mm
Width：3.86mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 23550

1+： $0.24071
10+： $0.22708
100+： $0.21423
500+： $0.20210
1000+： $0.19066

小計金額 $0.24071

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BC33825TA