MJD117G

ON Semiconductor
Transistors - Bipolar (BJT) - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
TRANS PNP DARL 100V 2A DPAK
Date Sheet

在庫數 544

1+： $1.56357
10+： $1.47506
100+： $1.39157
500+： $1.31280
1000+： $1.23849

小計金額 $1.56357

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 16 hours ago)
Factory Lead Time：2 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：100V
Collector-Emitter Saturation Voltage：2V
Number of Elements：1
Operating Temperature：-65°C~150°C TJ
Packaging：Tube
Published：2005
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Voltage - Rated DC：-100V
Max Power Dissipation：1.75W
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：-2A
Time@Peak Reflow Temperature-Max (s)：40
Base Part Number：MJD117
Pin Count：3
JESD-30 Code：R-PSSO-G2
Polarity：PNP
Element Configuration：Single
Power Dissipation：1.75W
Case Connection：COLLECTOR
Transistor Application：SWITCHING
Halogen Free：Halogen Free
Transistor Type：PNP - Darlington
Collector Emitter Voltage (VCEO)：100V
Max Collector Current：2A
DC Current Gain (hFE) (Min) @ Ic, Vce：1000 @ 2A 3V
Current - Collector Cutoff (Max)：20μA
Vce Saturation (Max) @ Ib, Ic：3V @ 40mA, 4A
Transition Frequency：25MHz
Frequency - Transition：25MHz
Collector Base Voltage (VCBO)：100V
Emitter Base Voltage (VEBO)：5V
Continuous Collector Current：2A
Height：2.38mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 544

1+： $1.56357
10+： $1.47506
100+： $1.39157
500+： $1.31280
1000+： $1.23849

小計金額 $1.56357

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MJD117G