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2N6035G
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-225AA, TO-126-3
- ON SEMICONDUCTOR - 2N6035G - DARLINGTON TRANSISTOR, PNP, -60V, TO-225
Date Sheet
在庫數 4997
- 1+： $0.68559
- 10+： $0.64678
- 100+： $0.61017
- 500+： $0.57563
- 1000+： $0.54305
小計金額 $0.68559
仕様 よくある質問
- Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time：8 Weeks
- Contact Plating：Tin
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Surface Mount：NO
- Number of Pins：3
- Weight：4.535924g
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：60V
- Collector-Emitter Saturation Voltage：2V
- Number of Elements：1
- hFEMin：100
- Operating Temperature：-65°C~150°C TJ
- Packaging：Bulk
- Published：2012
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Voltage - Rated DC：-60V
- Max Power Dissipation：40W
- Peak Reflow Temperature (Cel)：260
- Current Rating：4A
- Time@Peak Reflow Temperature-Max (s)：40
- Base Part Number：2N6035
- Pin Count：3
- Polarity：PNP
- Element Configuration：Single
- Transistor Application：AMPLIFIER
- Halogen Free：Halogen Free
- Transistor Type：PNP - Darlington
- Collector Emitter Voltage (VCEO)：60V
- Max Collector Current：4A
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 2A 3V
- Current - Collector Cutoff (Max)：100μA
- Vce Saturation (Max) @ Ib, Ic：3V @ 40mA, 4A
- Transition Frequency：25MHz
- Collector Base Voltage (VCBO)：60V
- Emitter Base Voltage (VEBO)：5V
- Height：6.35mm
- Length：6.35mm
- Width：6.35mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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