MJD112T4G

ON Semiconductor
Transistors - Bipolar (BJT) - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Trans Darlington NPN 100V 2A 3-Pin(2 Tab) DPAK T/R
Date Sheet

在庫數 20000

1+： $0.94671
10+： $0.89312
100+： $0.84256
500+： $0.79487
1000+： $0.74988

小計金額 $0.94671

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 4 days ago)
Factory Lead Time：8 Weeks
Contact Plating：Tin
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount：YES
Number of Pins：3
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：100V
Collector-Emitter Saturation Voltage：2V
Number of Elements：1
Operating Temperature：-65°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2005
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Voltage - Rated DC：100V
Max Power Dissipation：20W
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：2A
Time@Peak Reflow Temperature-Max (s)：40
Base Part Number：MJD112
Pin Count：3
JESD-30 Code：R-PSSO-G2
Polarity：NPN
Element Configuration：Single
Case Connection：COLLECTOR
Transistor Application：SWITCHING
Halogen Free：Halogen Free
Transistor Type：NPN - Darlington
Collector Emitter Voltage (VCEO)：100V
Max Collector Current：2A
DC Current Gain (hFE) (Min) @ Ic, Vce：1000 @ 2A 3V
Current - Collector Cutoff (Max)：20μA
Vce Saturation (Max) @ Ib, Ic：3V @ 40mA, 4A
Transition Frequency：25MHz
Max Breakdown Voltage：100V
Frequency - Transition：25MHz
Collector Base Voltage (VCBO)：100V
Emitter Base Voltage (VEBO)：5V
Continuous Collector Current：2A
Height：2.38mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 20000

1+： $0.94671
10+： $0.89312
100+： $0.84256
500+： $0.79487
1000+： $0.74988

小計金額 $0.94671

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MJD112T4G