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KSD526Y
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-220-3
- TRANS NPN 80V 4A TO-220
Date Sheet
在庫數 28000
- 1+: $1.55089
- 10+: $1.46310
- 100+: $1.38029
- 500+: $1.30216
- 1000+: $1.22845
小計金額 $1.55089
仕様 よくある質問
- Factory Lead Time:2 Weeks
- Lifecycle Status:ACTIVE (Last Updated: 4 days ago)
- Package / Case:TO-220-3
- Mounting Type:Through Hole
- Mount:Through Hole
- Number of Pins:3
- Weight:1.8g
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:80V
- hFEMin:40
- Number of Elements:1
- Collector-Emitter Saturation Voltage:450mV
- Published:2006
- Packaging:Bulk
- Operating Temperature:150°C TJ
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:80V
- Max Power Dissipation:30W
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Current Rating:4A
- Frequency:8MHz
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Base Part Number:KSD526
- Qualification Status:Not Qualified
- Element Configuration:Single
- Power Dissipation:30W
- Transistor Application:AMPLIFIER
- Gain Bandwidth Product:8MHz
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):80V
- Max Collector Current:4A
- DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 500mA 5V
- Current - Collector Cutoff (Max):30μA ICBO
- JEDEC-95 Code:TO-220AB
- Vce Saturation (Max) @ Ib, Ic:1.5V @ 300mA, 3A
- Transition Frequency:8MHz
- Collector Base Voltage (VCBO):80V
- Emitter Base Voltage (VEBO):5V
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 28000
- 1+: $1.55089
- 10+: $1.46310
- 100+: $1.38029
- 500+: $1.30216
- 1000+: $1.22845
小計金額 $1.55089
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