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BD243BTU
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-220-3
- Bipolar Transistors - BJT NPN Epitaxial Sil
Date Sheet
在庫數 208153
- 1+: $0.47246
- 10+: $0.44572
- 100+: $0.42049
- 500+: $0.39669
- 1000+: $0.37424
小計金額 $0.47246
仕様 よくある質問
- Lifecycle Status:LAST SHIPMENTS (Last Updated: 22 hours ago)
- Factory Lead Time:8 Weeks
- Contact Plating:Tin
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Number of Pins:3
- Weight:1.8g
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:80V
- Collector-Emitter Saturation Voltage:1.5V
- Number of Elements:1
- hFEMin:15
- Operating Temperature:150°C TJ
- Packaging:Tube
- Published:2000
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Voltage - Rated DC:80V
- Max Power Dissipation:65W
- Current Rating:6A
- Base Part Number:BD243
- Element Configuration:Single
- Power Dissipation:65W
- Transistor Application:SWITCHING
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):80V
- Max Collector Current:6A
- DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 3A 4V
- Current - Collector Cutoff (Max):700μA
- JEDEC-95 Code:TO-220AB
- Vce Saturation (Max) @ Ib, Ic:1.5V @ 1A, 6A
- Collector Base Voltage (VCBO):80V
- Emitter Base Voltage (VEBO):5V
- Radiation Hardening:No
- RoHS Status:RoHS Compliant
- Lead Free:Lead Free











