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KSH31CTF
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TRANS NPN 100V 3A DPAK
Date Sheet
在庫數 2000
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status:LAST SHIPMENTS (Last Updated: 1 week ago)
- Factory Lead Time:4 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins:3
- Weight:260.37mg
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:100V
- Collector-Emitter Saturation Voltage:1.2V
- Frequency - Gain Bandwidth Product (GBP):3MHz
- Power Dissipation (Max):1.56W
- Number of Elements:1
- hFEMin:10
- Operating Temperature:150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2002
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Voltage - Rated DC:100V
- Terminal Form:GULL WING
- Current Rating:3A
- Frequency:3MHz
- Base Part Number:KSH31
- JESD-30 Code:R-PSSO-G2
- Element Configuration:Single
- Power Dissipation:1.56W
- Transistor Application:AMPLIFIER
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):100V
- Max Collector Current:3A
- DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 3A 4V
- Current - Collector Cutoff (Max):50μA
- Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
- Transition Frequency:3MHz
- Max Breakdown Voltage:100V
- Collector Base Voltage (VCBO):100V
- Emitter Base Voltage (VEBO):5V
- Height:2.3mm
- Length:6.6mm
- Width:6.1mm
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free












