BC850AMTF

ON Semiconductor
Transistors - Bipolar (BJT) - Single
TO-236-3, SC-59, SOT-23-3
Bipolar Transistors - BJT SOT-23 NPN GP AMP
Date Sheet

在庫數 161688

1+： $0.06891
10+： $0.06501
100+： $0.06133
500+： $0.05786
1000+： $0.05458

小計金額 $0.06891

仕様よくある質問

Lifecycle Status：LAST SHIPMENTS (Last Updated: 6 days ago)
Factory Lead Time：6 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Number of Pins：3
Weight：30mg
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：45V
Collector-Emitter Saturation Voltage：200mV
Number of Elements：1
hFEMin：110
Operating Temperature：150°C TJ
Packaging：Tape & Reel (TR)
Published：2008
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Additional Feature：LOW NOISE
Voltage - Rated DC：45V
Max Power Dissipation：310mW
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：100mA
Frequency：300MHz
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Base Part Number：BC850
Qualification Status：Not Qualified
Element Configuration：Single
Power Dissipation：310mW
Transistor Application：SWITCHING
Gain Bandwidth Product：300MHz
Polarity/Channel Type：NPN
Transistor Type：NPN
Collector Emitter Voltage (VCEO)：45V
Max Collector Current：100mA
DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 2mA 5V
Current - Collector Cutoff (Max)：15nA ICBO
Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
Transition Frequency：300MHz
Max Breakdown Voltage：45V
Collector Base Voltage (VCBO)：50V
Emitter Base Voltage (VEBO)：5V
Height：930μm
Length：2.92mm
Width：1.3mm
RoHS Status：RoHS Compliant
Lead Free：Lead Free

在庫數 161688

1+： $0.06891
10+： $0.06501
100+： $0.06133
500+： $0.05786
1000+： $0.05458

小計金額 $0.06891

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BC850AMTF