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FDPC8014S
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Arrays
- 8-PowerWDFN
- MOSFET 2N-CH 25V 8PWRCLIP
Date Sheet
在庫數 49200
- 1+: $1.82582
- 10+: $1.72247
- 100+: $1.62497
- 500+: $1.53299
- 1000+: $1.44622
小計金額 $1.82582
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 3 days ago)
- Factory Lead Time:23 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:8-PowerWDFN
- Number of Pins:8
- Weight:207.7333mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:20A 41A
- Number of Elements:2
- Turn Off Delay Time:47 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- Published:2017
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:8
- ECCN Code:EAR99
- Max Power Dissipation:2.3W
- Terminal Form:NO LEAD
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:not_compliant
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Number of Channels:2
- Operating Mode:ENHANCEMENT MODE
- Case Connection:DRAIN
- Turn On Delay Time:16 ns
- Power - Max:2.1W 2.3W
- FET Type:2 N-Channel (Dual) Asymmetrical
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:3.8m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:2375pF @ 13V
- Gate Charge (Qg) (Max) @ Vgs:35nC @ 10V
- Rise Time:6ns
- Drain to Source Voltage (Vdss):25V
- Fall Time (Typ):4 ns
- Continuous Drain Current (ID):41A
- Gate to Source Voltage (Vgs):12V
- Drain Current-Max (Abs) (ID):110A
- Pulsed Drain Current-Max (IDM):75A
- Avalanche Energy Rating (Eas):73 mJ
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- FET Feature:Logic Level Gate
- Height:750μm
- Length:5.1mm
- Width:6.1mm
- RoHS Status:ROHS3 Compliant
在庫數 49200
- 1+: $1.82582
- 10+: $1.72247
- 100+: $1.62497
- 500+: $1.53299
- 1000+: $1.44622
小計金額 $1.82582
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