FDG6332C

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
6-TSSOP, SC-88, SOT-363
ON SEMICONDUCTOR - FDG6332C - Dual MOSFET, N and P Channel, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
Date Sheet

在庫數 490

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
Factory Lead Time：10 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Number of Pins：6
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：700mA 600mA
Number of Elements：2
Turn Off Delay Time：6 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2017
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：6
ECCN Code：EAR99
Resistance：300MOhm
Max Power Dissipation：300mW
Terminal Form：GULL WING
Current Rating：700mA
Voltage：20V
Element Configuration：Dual
Current：7A
Operating Mode：ENHANCEMENT MODE
Power Dissipation：300mW
FET Type：N and P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：300m Ω @ 700mA, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：113pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：1.5nC @ 4.5V
Rise Time：14ns
Polarity/Channel Type：N-CHANNEL AND P-CHANNEL
Fall Time (Typ)：14 ns
Continuous Drain Current (ID)：700mA
Threshold Voltage：1.1V
Gate to Source Voltage (Vgs)：12V
Drain to Source Breakdown Voltage：20V
FET Technology：METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)：150°C
FET Feature：Logic Level Gate
Height：1.1mm
Length：2mm
Width：1.25mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 490

小計金額 $0.00000

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FDG6332C