FDC6506P

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
SOT-23-6 Thin, TSOT-23-6
Trans MOSFET P-CH 30V 1.8A 6-Pin SuperSOT T/R
Date Sheet

在庫數 12500

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
Factory Lead Time：10 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Number of Pins：6
Weight：36mg
Transistor Element Material：SILICON
Number of Elements：2
Turn Off Delay Time：14 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：1999
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：6
ECCN Code：EAR99
Resistance：170MOhm
Additional Feature：LOGIC LEVEL COMPATIBLE
Voltage - Rated DC：-30V
Max Power Dissipation：960mW
Terminal Form：GULL WING
Current Rating：-1.8A
Number of Channels：2
Element Configuration：Dual
Operating Mode：ENHANCEMENT MODE
Power Dissipation：960mW
Turn On Delay Time：7 ns
Power - Max：700mW
FET Type：2 P-Channel (Dual)
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：170m Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：190pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：3.5nC @ 10V
Rise Time：8ns
Fall Time (Typ)：8 ns
Continuous Drain Current (ID)：1.8A
Threshold Voltage：-1.8V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：-30V
Dual Supply Voltage：30V
FET Technology：METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)：150°C
FET Feature：Logic Level Gate
Height：1.1mm
Length：3mm
Width：1.7mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 12500

小計金額 $0.00000

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