FDD8424H

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
TO-252-5, DPak (4 Leads + Tab), TO-252AD
Trans MOSFET N/P-CH 40V 9A/6.5A 5-Pin(4 Tab) TO-252 T/R
Date Sheet

在庫數 2242

1+： $1.26919
10+： $1.19735
100+： $1.12957
500+： $1.06563
1000+： $1.00531

小計金額 $1.26919

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：17 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-5, DPak (4 Leads + Tab), TO-252AD
Number of Pins：5
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：9A 6.5A
Number of Elements：2
Turn Off Delay Time：20 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2014
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：4
ECCN Code：EAR99
Resistance：24MOhm
Terminal Finish：Tin (Sn)
Max Power Dissipation：3.1W
Terminal Position：SINGLE
Terminal Form：GULL WING
Base Part Number：FDD8424
JESD-30 Code：R-PSSO-G4
Number of Channels：2
Operating Mode：ENHANCEMENT MODE
Power Dissipation：3.1W
Case Connection：DRAIN
Turn On Delay Time：7 ns
Power - Max：1.3W
FET Type：N and P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：24m Ω @ 9A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1000pF @ 20V
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Rise Time：3ns
Polarity/Channel Type：N-CHANNEL AND P-CHANNEL
Fall Time (Typ)：3 ns
Continuous Drain Current (ID)：9A
Threshold Voltage：1.7V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：9A
Drain to Source Breakdown Voltage：40V
FET Technology：METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)：150°C
FET Feature：Logic Level Gate
Height：2.517mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 2242

1+： $1.26919
10+： $1.19735
100+： $1.12957
500+： $1.06563
1000+： $1.00531

小計金額 $1.26919

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FDD8424H