FDD6612A

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 30V 9.5A DPAK
Date Sheet

在庫數 35000

1+： $0.45047
10+： $0.42498
100+： $0.40092
500+： $0.37823
1000+： $0.35682

小計金額 $0.45047

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 14 hours ago)
Factory Lead Time：10 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：9.5A Ta 30A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：2.8W Ta 36W Tc
Turn Off Delay Time：24 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Published：2004
Series：PowerTrench®
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：20MOhm
Terminal Finish：Tin (Sn)
Additional Feature：LOGIC LEVEL COMPATIBLE
Voltage - Rated DC：30V
Terminal Form：GULL WING
Current Rating：30A
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：36W
Case Connection：DRAIN
Turn On Delay Time：9 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：20m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：660pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：9.4nC @ 5V
Rise Time：5ns
Vgs (Max)：±20V
Fall Time (Typ)：4 ns
Continuous Drain Current (ID)：30A
Threshold Voltage：2V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：9.5A
Drain to Source Breakdown Voltage：30V
Pulsed Drain Current-Max (IDM)：60A
Avalanche Energy Rating (Eas)：90 mJ
Nominal Vgs：2 V
Height：2.39mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 35000

1+： $0.45047
10+： $0.42498
100+： $0.40092
500+： $0.37823
1000+： $0.35682

小計金額 $0.45047

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FDD6612A